The effect of gate layout on responsitivity of MOSFET THz detector

In this paper an attention is paid to the existence of parasitic elements in a typical n-channel MOSFET devices that are often employed in sub-THz detectors and the role they play in when such devices are employed at sub-THz frequencies. An effective circuit model of such a structure was constructed. The most of the effort was put to investigate the influence of the layout of the MOSFET´s Gate on the expected responsivity of the detector. In particular, attention was paid to the contacts between the metallization layer (MET) that connects the Gate to the outside world, and the polysilicon (POLY) layer that forms the actual Gate in a typical MOSFET.