Title :
Photocurrent response of Schottky diode on silicon-implanted SiO/sub 2/ substrate
Author :
Gong-Ru Lin ; Chin-Chia Hsu
Author_Institution :
Graduate Program in Electro-Opt. Eng., Tatung Univ., Taipei, Taiwan
Abstract :
We briefly report the optoelectronic characteristics of Schottky-type photodiode fabricated on the silicon-implanted borosilicate glass (SiO/sub 2/:Si/sup +/)-a novel nano-crystallite Si semi-conducting material. The dark current, photocurrent and breakdown voltage of the SiO/sub 2/:Si/sup +/ photodiode illuminated by Ar/sup +/ laser are measured. The effect of annealing time on the semi-conducting property of such material is characterized.
Keywords :
Schottky diodes; annealing; contact resistance; photodiodes; silicon; silicon compounds; Schottky-type photodiode; SiO/sub 2/:Si; annealing time; breakdown voltage; contact resistance; current-voltage measurements; dark current; laser illuminated device; nanocrystallite semiconducting material; optoelectronic characteristics; photocurrent response; sheet resistance; silicon-implanted borosilicate glass; specific contact resistivity; transmission line measurements; Annealing; Argon; Current measurement; Dark current; Glass; Nanostructured materials; Optical materials; Photoconductivity; Photodiodes; Schottky diodes;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-6738-3
DOI :
10.1109/CLEOPR.2001.970884
