Photocurrent response of Schottky diode on silicon-implanted SiO/sub 2/ substrate

Author

Gong-Ru Lin ; Chin-Chia Hsu

Author_Institution

Graduate Program in Electro-Opt. Eng., Tatung Univ., Taipei, Taiwan

Volume

2

fYear

2001

fDate

15-19 July 2001

Abstract

We briefly report the optoelectronic characteristics of Schottky-type photodiode fabricated on the silicon-implanted borosilicate glass (SiO/sub 2/:Si/sup +/)-a novel nano-crystallite Si semi-conducting material. The dark current, photocurrent and breakdown voltage of the SiO/sub 2/:Si/sup +/ photodiode illuminated by Ar/sup +/ laser are measured. The effect of annealing time on the semi-conducting property of such material is characterized.

Keywords

Schottky diodes; annealing; contact resistance; photodiodes; silicon; silicon compounds; Schottky-type photodiode; SiO/sub 2/:Si; annealing time; breakdown voltage; contact resistance; current-voltage measurements; dark current; laser illuminated device; nanocrystallite semiconducting material; optoelectronic characteristics; photocurrent response; sheet resistance; silicon-implanted borosilicate glass; specific contact resistivity; transmission line measurements; Annealing; Argon; Current measurement; Dark current; Glass; Nanostructured materials; Optical materials; Photoconductivity; Photodiodes; Schottky diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on

Conference_Location

Chiba, Japan

Print_ISBN

0-7803-6738-3

Type

conf

DOI

10.1109/CLEOPR.2001.970884

Filename

970884