Title :
Large negative electrorefractive index change in modified five-layer asymmetric coupled quantum well (FACQW)
Author :
Arakawa, T. ; Feng, H. ; Tada, K. ; Iino, R. ; Kazuma, K. ; Noh, J.H.
Author_Institution :
Fac. of Eng., Yokohama Nat. Univ., Japan
Abstract :
We study in detail a modified structure of the five-layer asymmetric coupled quantum well (FACQW) for a large negative electrorefractive index change /spl Delta/n. The influence of the layer thickness fluctuation on /spl Delta/n of the modified FACQW is also discussed.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; fluctuations; gallium arsenide; optical switches; refractive index; semiconductor quantum wells; symmetry; GaAs-AlGaAs; electro optical modulation; electrorefractive index change; large negative electrorefractive index change; layer thickness fluctuation; modified five-layer asymmetric coupled quantum well; optical switches; optical waveguide devices; Absorption; Automated highways; Charge carrier processes; Electrons; Excitons; Gallium arsenide; Optical devices; Optical waveguides; Quantum computing; Refractive index;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-6738-3
DOI :
10.1109/CLEOPR.2001.970917
