DocumentCode
376611
Title
Near-field photoreflectance spectroscopy of GaAs/AlGaAs quantum wells
Author
Yong-Hoon Cho ; Jbe, W.
Author_Institution
Dept. of Phys., Chung-Buk Nat. Univ., Cheongju, South Korea
Volume
2
fYear
2001
fDate
15-19 July 2001
Abstract
We present near-field photoreflectance (NPR) spectroscopic studies of semiconductor quantum structures using near-field scanning optical microscope. The NPR technique has several advantages such as a higher signal-to-noise ratio, a better spatial resolution, and a lower temperature sensitivity of the signal intensity.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; near-field scanning optical microscopy; optical noise; photoreflectance; semiconductor quantum wells; GaAs-AlGaAs; GaAs/AlGaAs quantum wells; lower temperature sensitivity; near-field photoreflectance spectroscopic studies; near-field photoreflectance spectroscopy; near-field scanning optical microscope; semiconductor quantum structures; signal intensity; signal-to-noise ratio; spatial resolution; Fiber lasers; Gallium arsenide; Laser excitation; Laser feedback; Optical fiber couplers; Optical microscopy; Probes; Pump lasers; Resonance; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location
Chiba, Japan
Print_ISBN
0-7803-6738-3
Type
conf
DOI
10.1109/CLEOPR.2001.970983
Filename
970983
Link To Document