Title :
Effect of Sn dopant concentration on structural and electrical properties of ZnO nanostructures based methane gas sensor
Author :
A.K. Shafura;M. Hannas;N.D. Md. Sin;M Uzer;M.H. Mamat;A. Shuhaimi;Salman A.H. Alrokayan;Haseeb A. Khan;M. Rusop
Author_Institution :
NANO-ElecTronic Center (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Malaysia
Abstract :
Zinc oxide (ZnO) nanostructures had successfully prepared using sol-gel immersion method. The tin (Sn) dopant concentration was varied between 0.4 to 2.0 at.%. The surface topography and electrical properties of the ZnO nanostructures were studied using atomic force microscopy (AFM) and current-voltage (IV) measurement. The highest conductivity of 1.68 × 10-2 Scm-1 was obtained by 2.0 at.% sample. The Sn-doped ZnO sample is notably shortens the response time and recovery time with better sensitivity towards methane gas.
Keywords :
"Zinc oxide","II-VI semiconductor materials","Nanostructures","Gas detectors","Films"
Conference_Titel :
Research and Development (SCOReD), 2015 IEEE Student Conference on
DOI :
10.1109/SCORED.2015.7449415
