Highly uniform and reproducible 850 nm vertical-cavity surface-emitting lasers grown by MOCVD

Author

Jang, H.J. ; Song, Y.H. ; Jeong, B.J. ; Lee, K.H. ; Son, J.K. ; Lee, Y.H. ; Choi, D.G. ; Yang, S.S. ; Yang, J.W. ; Lim, K.Y. ; Yang, G.M.

Author_Institution

Semicond. Phys. Reserch Center, Chonbuk Nat. Univ., Chonju, South Korea

Volume

2

fYear

2001

fDate

15-19 July 2001

Abstract

850 nm vertical-cavity surface-emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD). High uniformity of the Fabry-Perot cavity wavelength for VCSEL materials of /spl plusmn/0.15 % across a 3-in diameter wafer was achieved. Also, /spl plusmn/0.1 % Al composition uniformity of Al/sub 0.98/Ga/sub 0.02/As was obtained.

Keywords

Fabry-Perot resonators; MOCVD; laser transitions; optical fabrication; semiconductor growth; semiconductor lasers; surface emitting lasers; 3 in; 850 nm; Al/sub 0.98/Ga/sub 0.02/As; Fabry-Perot cavity wavelength; MOCVD; VCSEL; composition uniformity; highly uniform reproducible 850 nm vertical-cavity surface-emitting lasers; metalorganic chemical vapor deposition; Apertures; Chemical lasers; Fabry-Perot; Laser theory; MOCVD; Optical surface waves; Physics; Surface emitting lasers; Thickness control; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on

Conference_Location

Chiba, Japan

Print_ISBN

0-7803-6738-3

Type

conf

DOI

10.1109/CLEOPR.2001.971098

Filename

971098