Title :
GaInNAs long wavelength vertical cavity lasers
Author :
Larson, M.C. ; Coldren, C.W. ; Spruytte, S.G. ; Petersen, H.E. ; Garrett, H.E. ; Harris, J.S.
Author_Institution :
Agility Commun., Santa Barbara, CA, USA
Abstract :
We describe low-threshold (/spl sim/1 mA) GaInNAs VCSELs emitting at a wavelength of 1.2 /spl mu/m under continuous-wave room temperature operation. The bottom mirror consists of a 22.5-period n-doped GaAs/AlAs distributed Bragg reflector (DBR) designed for a center wavelength /spl lambda/ near 1.2 /spl mu/m, the top mirror is a 20-period p-doped DBR with a Ti/Au contact electrode, and the GaAs /spl lambda/ cavity contains three 70 /spl Aring/ Ga/sub 0.3/In/sub 0.7/N/sub 0.02/As/sub 0.98/ quantum wells (QWs) separated by 200 /spl Aring/ GaAs barriers. The epilayers were grown by molecular beam epitaxy using solid source arsenic and a rf nitrogen plasma source. After growth, the top mirror was patterned by dry etching, and the three bottom-most AlAs layers were laterally oxidized, which formed square unoxidized apertures as small as 3.6 /spl mu/m on a side. Devices were mounted without heat sinking on a glass slide for optical emission through the substrate.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium compounds; indium compounds; laser transitions; molecular beam epitaxial growth; optical fabrication; quantum well lasers; semiconductor growth; sputter etching; surface emitting lasers; 1 mA; 1.2 micron; 200 A; 3.6 micron; 70 A; DBR; Ga/sub 0.3/In/sub 0.7/N/sub 0.02/As/sub 0.98/; Ga/sub 0.3/In/sub 0.7/N/sub 0.02/As/sub 0.98/ quantum wells; GaAs barriers; GaAs cavity; GaAs-AlAs; GaInNAs; GaInNAs long wavelength vertical cavity lasers; Ti-Au; Ti/Au contact electrode; bottom mirror; continuous-wave room temperature operation; dry etching; epilayers; glass slide; laterally oxidized AlAs layers; low-threshold GaInNAs VCSEL; molecular beam epitaxy; n-doped GaAs/AlAs distributed Bragg reflector; optical emission; p-doped DBR; rf nitrogen plasma source; solid source arsenic; square unoxidized apertures; substrate; top mirror; Distributed Bragg reflectors; Electrodes; Gallium arsenide; Gold; Mirrors; Molecular beam epitaxial growth; Nitrogen; Plasma temperature; Solids; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-6738-3
DOI :
10.1109/CLEOPR.2001.971099
