Title :
Low threshold current density operation (J/sub th/ = 340A/cm/sup 2/) of GaInNAs/GaAs quantum well lasers grown by metalorganic chemical vapor deposition
Author :
Kawaguchi, M. ; Miyamoto, T. ; Gouardes, E. ; Kondo, T. ; Koyama, F. ; Iga, K.
Author_Institution :
Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
We have achieved the lowest threshold current density of 340 A/cm/sup 2/ with a high characteristic temperature of over 200 K in 1.25 /spl mu/m GaInNAs/GaAs lasers grown by MOCVD. A threshold current density per well of 170 A/cm/sup 2/ is the record low value for 1.2/spl sim/1.3 /spl mu/m GaInNAs lasers.
Keywords :
III-V semiconductors; MOCVD; current density; gallium arsenide; indium compounds; quantum well lasers; semiconductor growth; 1.2 to 1.3 micron; 1.25 micron; 200 K; GaInNAs-GaAs; GaInNAs/GaAs quantum well lasers; high characteristic temperature; low threshold current density operation; metalorganic chemical vapor deposition; Chemical lasers; Chemical vapor deposition; Gallium arsenide; MOCVD; Pulsed laser deposition; Quantum well lasers; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-6738-3
DOI :
10.1109/CLEOPR.2001.971100
