DocumentCode
376712
Title
Low threshold current density operation (J/sub th/ = 340A/cm/sup 2/) of GaInNAs/GaAs quantum well lasers grown by metalorganic chemical vapor deposition
Author
Kawaguchi, M. ; Miyamoto, T. ; Gouardes, E. ; Kondo, T. ; Koyama, F. ; Iga, K.
Author_Institution
Tokyo Inst. of Technol., Yokohama, Japan
Volume
2
fYear
2001
fDate
15-19 July 2001
Abstract
We have achieved the lowest threshold current density of 340 A/cm/sup 2/ with a high characteristic temperature of over 200 K in 1.25 /spl mu/m GaInNAs/GaAs lasers grown by MOCVD. A threshold current density per well of 170 A/cm/sup 2/ is the record low value for 1.2/spl sim/1.3 /spl mu/m GaInNAs lasers.
Keywords
III-V semiconductors; MOCVD; current density; gallium arsenide; indium compounds; quantum well lasers; semiconductor growth; 1.2 to 1.3 micron; 1.25 micron; 200 K; GaInNAs-GaAs; GaInNAs/GaAs quantum well lasers; high characteristic temperature; low threshold current density operation; metalorganic chemical vapor deposition; Chemical lasers; Chemical vapor deposition; Gallium arsenide; MOCVD; Pulsed laser deposition; Quantum well lasers; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location
Chiba, Japan
Print_ISBN
0-7803-6738-3
Type
conf
DOI
10.1109/CLEOPR.2001.971100
Filename
971100
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