Continuous-wave operation of 1.27-/spl mu/m GaAsSb/GaAs VCSELs

Author

Anan, T. ; Yamada, M. ; Nishi, K. ; Kurihara, K. ; Tokutome, K. ; Kamei, A. ; Sugou, S.

Author_Institution

Real World Comput. Partnership, Opt. Interconnection NEC Lab., Ibaraki, Japan

Volume

2

fYear

2001

fDate

15-19 July 2001

Abstract

1.27-/spl mu/m VCSELs using GaAsSb quantum wells, which operate continuous-wave at and above room temperature (RT), are reported. A threshold current as low as 0.7 mA at RT and a maximum cw operating temperature of 70/spl deg/C are demonstrated. This result was achieved by optimizing the active-layer structure with respect to strain. Thus, GaAsSb VCSELs are viable low-cost light sources for high-bandwidth fiber communications.

Keywords

III-V semiconductors; gallium arsenide; laser transitions; optical transmitters; quantum well lasers; surface emitting lasers; 0.7 mA; 1.27 micron; 1.27-/spl mu/m GaAsSb/GaAs VCSEL; 70 degC; GaAsSb-GaAs; active-layer structure; continuous-wave operation; high-bandwidth fiber communications; low-cost light sources; maximum cw operating temperature; room temperature; strain; threshold current; Apertures; Distributed Bragg reflectors; Epitaxial growth; Epitaxial layers; Gallium arsenide; National electric code; Substrates; Temperature; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on

Conference_Location

Chiba, Japan

Print_ISBN

0-7803-6738-3

Type

conf

DOI

10.1109/CLEOPR.2001.971102

Filename

971102