Title :
Room-temperature CW operation of InP-based long-wavelength InAs quantum dot lasers
Author :
Saito, H. ; Nishi, K. ; Sugou, S.
Author_Institution :
Syst. Devices & Fundamental Res., NEC Corp., Ibaraki, Japan
Abstract :
Long-wavelength quantum-dot lasers were fabricated on InP (311)B substrates by using high-dense InAs quantum dots (9 /spl times/10/sup 10/ cm/sup -2/) as active media, which achieved 1.6-/spl mu/m continuous-wave lasing at room temperature. The lasers had a low threshold current density of 380 A/cm/sup 2/ and a high external differential quantum efficiency of 32%.
Keywords :
III-V semiconductors; MOCVD; current density; indium compounds; laser transitions; molecular beam epitaxial growth; optical fabrication; quantum well lasers; semiconductor growth; semiconductor quantum dots; vapour phase epitaxial growth; 1.6 micron; In/sub 0.52/Al/sub 0.29/Ga/sub 0.19/As; In/sub 0.52/Al/sub 0.29/Ga/sub 0.19/As buffer layer; InAs; InP; InP (311)B substrates; InP-based long-wavelength InAs quantum dot lasers; MBE; continuous wave lasing; high external differential quantum efficiency; high-dense InAs quantum dots; low threshold current density; metal-organic vapor phase epitaxy; room temperature; room-temperature CW operation; Coatings; Gallium arsenide; Indium phosphide; Mirrors; Molecular beam epitaxial growth; Quantum dot lasers; Substrates; Temperature; Threshold current; US Department of Transportation;
Conference_Titel :
Lasers and Electro-Optics, 2001. CLEO/Pacific Rim 2001. The 4th Pacific Rim Conference on
Conference_Location :
Chiba, Japan
Print_ISBN :
0-7803-6738-3
DOI :
10.1109/CLEOPR.2001.971103
