DocumentCode
3767159
Title
Design of SRAM array using 8T cell for low power sensor network
Author
Colin David Karat;K Soorya Krishna
Author_Institution
VLSI Design and Embedded System, SIT, Valachil-574143, Mangaluru, India
fYear
2015
Firstpage
1
Lastpage
6
Abstract
The application of sensor networks varies from medical field to the military application. The raw data onto the sensor node is of large quantity and it is necessary to store these data bits. In this paper, design of optimized Static Random Access Memory (SRAM) array for the sensor application is implemented. SRAM cell is designed using 8T. The Half Select Condition Free Cross Point 8T SRAM is modified, using transmission gates as access transistors. By simulation, it is observed that the write-ability is enhanced and reduction in the power dissipation. Apart from the memory cell, the SRAM array has been constructed using the optimized peripheral circuits. Simulations show that reading and writing of data takes place correctly.
Keywords
"Layout","Transistors","Decoding","CMOS integrated circuits","SRAM cells","Logic gates"
Publisher
ieee
Conference_Titel
Engineering (NUiCONE), 2015 5th Nirma University International Conference on
Type
conf
DOI
10.1109/NUICONE.2015.7449595
Filename
7449595
Link To Document