• DocumentCode
    3767159
  • Title

    Design of SRAM array using 8T cell for low power sensor network

  • Author

    Colin David Karat;K Soorya Krishna

  • Author_Institution
    VLSI Design and Embedded System, SIT, Valachil-574143, Mangaluru, India
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    The application of sensor networks varies from medical field to the military application. The raw data onto the sensor node is of large quantity and it is necessary to store these data bits. In this paper, design of optimized Static Random Access Memory (SRAM) array for the sensor application is implemented. SRAM cell is designed using 8T. The Half Select Condition Free Cross Point 8T SRAM is modified, using transmission gates as access transistors. By simulation, it is observed that the write-ability is enhanced and reduction in the power dissipation. Apart from the memory cell, the SRAM array has been constructed using the optimized peripheral circuits. Simulations show that reading and writing of data takes place correctly.
  • Keywords
    "Layout","Transistors","Decoding","CMOS integrated circuits","SRAM cells","Logic gates"
  • Publisher
    ieee
  • Conference_Titel
    Engineering (NUiCONE), 2015 5th Nirma University International Conference on
  • Type

    conf

  • DOI
    10.1109/NUICONE.2015.7449595
  • Filename
    7449595