• DocumentCode
    376803
  • Title

    Effects of impurity traps on gate current and trapped charge in MOSFETs

  • Author

    Islam, Syed S. ; Khan, M. Rezwan ; Anwar, A.F.M.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Connecticut Univ., Storrs, CT, USA
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    98
  • Lastpage
    101
  • Abstract
    A quantum mechanical analysis of the gate current and trapped charge inside oxide layer of an enhancement type MOSFET has been presented in this paper. The effects of the impurity atoms inside oxide layer on the gate current and trapped charge have been analyzed. Carrier trapping due to an impurity atom inside oxide layer is simulated using a rectangular potential well. Calculation of the gate current and trapped charge is carried out for various MOSFET parameters
  • Keywords
    MOSFET; electron traps; impurity states; semiconductor device models; enhancement type MOSFET; gate current; impurity traps; oxide layer; quantum mechanical analysis; rectangular potential well; trapped charge; Atomic layer deposition; Electron traps; Impedance; MOSFETs; Particle scattering; Potential well; Quantum computing; Quantum mechanics; Semiconductor impurities; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2001 International
  • Conference_Location
    Washington, DC
  • Print_ISBN
    0-7803-7432-0
  • Type

    conf

  • DOI
    10.1109/ISDRS.2001.984448
  • Filename
    984448
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=376803