• DocumentCode
    3768051
  • Title

    The application of magnetic random access memory in remote sensing camera

  • Author

    Xu Zhang;Tao Liu;Hua Wang;Da Peng Zhang;Shou Rong Zhang

  • Author_Institution
    Beijing Institute of Space Mechanics and Electricity, Beijing 100094, China
  • fYear
    2015
  • Firstpage
    402
  • Lastpage
    403
  • Abstract
    At present, there is an urgent requirement for the reliability and the radiation resistivity in remote sensing camera. The existing memories are mainly conventional semiconductor devices, which are easily affected by radiation and destroyed by radiation in aerospace. In this paper, we recommend an application of MRAM (Magnetic Random Access Memory) in remote sensing camera. The design improves the reliability of the remote sensing camera in hardware and software. In hardware, Magnetic Tunnel Junction (MTJ), the basic element for MRAM, is immune to Single Event Upset (SEU). Meanwhile using Latch-up Current Limiter (LCL) connects the supply and MRAM to monitor the current, which can avoid the current too large. In software, Field Programmable Gate Array (FPGA) detects the status of LCL. Once the times of overcurrent are more than five times, LCL would be turned off permanently by FPGA. As thus it is effective to protect the devices from being damaged. The paper presents the architecture of the control system of MRAMs, and implements it.
  • Keywords
    "Magnetic tunneling","Remote sensing","Cameras","Field programmable gate arrays","Random access memory","Control systems","Reliability"
  • Publisher
    ieee
  • Conference_Titel
    Applied Superconductivity and Electromagnetic Devices (ASEMD), 2015 IEEE International Conference on
  • Print_ISBN
    978-1-4673-8106-2
  • Type

    conf

  • DOI
    10.1109/ASEMD.2015.7453632
  • Filename
    7453632