DocumentCode
3768051
Title
The application of magnetic random access memory in remote sensing camera
Author
Xu Zhang;Tao Liu;Hua Wang;Da Peng Zhang;Shou Rong Zhang
Author_Institution
Beijing Institute of Space Mechanics and Electricity, Beijing 100094, China
fYear
2015
Firstpage
402
Lastpage
403
Abstract
At present, there is an urgent requirement for the reliability and the radiation resistivity in remote sensing camera. The existing memories are mainly conventional semiconductor devices, which are easily affected by radiation and destroyed by radiation in aerospace. In this paper, we recommend an application of MRAM (Magnetic Random Access Memory) in remote sensing camera. The design improves the reliability of the remote sensing camera in hardware and software. In hardware, Magnetic Tunnel Junction (MTJ), the basic element for MRAM, is immune to Single Event Upset (SEU). Meanwhile using Latch-up Current Limiter (LCL) connects the supply and MRAM to monitor the current, which can avoid the current too large. In software, Field Programmable Gate Array (FPGA) detects the status of LCL. Once the times of overcurrent are more than five times, LCL would be turned off permanently by FPGA. As thus it is effective to protect the devices from being damaged. The paper presents the architecture of the control system of MRAMs, and implements it.
Keywords
"Magnetic tunneling","Remote sensing","Cameras","Field programmable gate arrays","Random access memory","Control systems","Reliability"
Publisher
ieee
Conference_Titel
Applied Superconductivity and Electromagnetic Devices (ASEMD), 2015 IEEE International Conference on
Print_ISBN
978-1-4673-8106-2
Type
conf
DOI
10.1109/ASEMD.2015.7453632
Filename
7453632
Link To Document