• DocumentCode
    3768339
  • Title

    The research of 220 GHz InP HBT monolithic power amplifier

  • Author

    Zhang Lv; Wang Lei; Ruimin Xu

  • Author_Institution
    School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
  • fYear
    2015
  • Firstpage
    161
  • Lastpage
    163
  • Abstract
    In this paper, a 220 GHz monolithic power amplifier (PA) is presented by using InP heterojunction bipolar transistor (HBT) technology. A cascode constituted by common emitter and common base InP HBTs is employed due to its superior high-frequency maximum stable gain (MSG). The result shows that a two-stage monolithic microwave integrated circuit (MMIC) power amplifier using an emitter width 0.5 um Indium Phosphide HBT technology can demonstrate 14dB small signal gain.
  • Keywords
    "Heterojunction bipolar transistors","MMICs","Capacitors","Indium","Gain","Radiometry","Weapons"
  • Publisher
    ieee
  • Conference_Titel
    Communication Problem-Solving (ICCP), 2015 IEEE International Conference on
  • Print_ISBN
    978-1-4673-6543-7
  • Type

    conf

  • DOI
    10.1109/ICCPS.2015.7454116
  • Filename
    7454116
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3768339