Title :
220GHz InP DHBT Voltage-Controlled Oscillators
Author :
Fengchun Ge; Lei Wang; Bo Yan
Author_Institution :
Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China, Chengdu, 611731, China
Abstract :
In this paper, a monolithic 220GHz Voltage-Controlled Oscillators is presented by using 0.5μm InP DHBT technology. Oscillator designs are based on a differential series-tuned topology. The varactor of the Oscillator is achieved by a HBT transistor whose base connects with the collector. The simulated output power is -2.4 dBm. Due to the selection small capacity of the transistor, the oscillation frequency can be tuned between 221.3 and 221.9 GHz when the tuning voltage is between 0 and 2V. A phase noise of -92 dBc/Hz is achieved at 10MHz offsets. The chip area is 0.87mm×0.61mm.
Keywords :
"Indium phosphide","III-V semiconductor materials","Voltage-controlled oscillators","Heterojunction bipolar transistors","DH-HEMTs"
Conference_Titel :
Communication Problem-Solving (ICCP), 2015 IEEE International Conference on
Print_ISBN :
978-1-4673-6543-7
DOI :
10.1109/ICCPS.2015.7454168
