• DocumentCode
    3768391
  • Title

    220GHz InP DHBT Voltage-Controlled Oscillators

  • Author

    Fengchun Ge; Lei Wang; Bo Yan

  • Author_Institution
    Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China, Chengdu, 611731, China
  • fYear
    2015
  • Firstpage
    341
  • Lastpage
    343
  • Abstract
    In this paper, a monolithic 220GHz Voltage-Controlled Oscillators is presented by using 0.5μm InP DHBT technology. Oscillator designs are based on a differential series-tuned topology. The varactor of the Oscillator is achieved by a HBT transistor whose base connects with the collector. The simulated output power is -2.4 dBm. Due to the selection small capacity of the transistor, the oscillation frequency can be tuned between 221.3 and 221.9 GHz when the tuning voltage is between 0 and 2V. A phase noise of -92 dBc/Hz is achieved at 10MHz offsets. The chip area is 0.87mm×0.61mm.
  • Keywords
    "Indium phosphide","III-V semiconductor materials","Voltage-controlled oscillators","Heterojunction bipolar transistors","DH-HEMTs"
  • Publisher
    ieee
  • Conference_Titel
    Communication Problem-Solving (ICCP), 2015 IEEE International Conference on
  • Print_ISBN
    978-1-4673-6543-7
  • Type

    conf

  • DOI
    10.1109/ICCPS.2015.7454168
  • Filename
    7454168
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3768391