• DocumentCode
    3768399
  • Title

    Current gain increase by SiNx passivation in InGaAs/InP double heterostructure bipolar transistors

  • Author

    Junling Xie; Wei Cheng; Yuan Wang; Bin Niu; Long Chang; Tangsheng Chen

  • Author_Institution
    Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, 210016, China
  • fYear
    2015
  • Firstpage
    366
  • Lastpage
    368
  • Abstract
    Passivation of InGaAs/InP double heterostructure bipolar transistors (DHBTs) with room temperature SiNx deposition was investigated. Due to reduction of surface damages during SiNx deposition, current gain improvement was observed at low bias voltage region. According to our analysis, a drastic decrease of surface recombination related current component at base-emitter junction occurred after passivation, which is crucial for improving the device reliability.
  • Keywords
    "Doping","Substrates","Semiconductor device reliability","Passivation","Double heterojunction bipolar transistors"
  • Publisher
    ieee
  • Conference_Titel
    Communication Problem-Solving (ICCP), 2015 IEEE International Conference on
  • Print_ISBN
    978-1-4673-6543-7
  • Type

    conf

  • DOI
    10.1109/ICCPS.2015.7454176
  • Filename
    7454176
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3768399