Title :
Current gain increase by SiNx passivation in InGaAs/InP double heterostructure bipolar transistors
Author :
Junling Xie; Wei Cheng; Yuan Wang; Bin Niu; Long Chang; Tangsheng Chen
Author_Institution :
Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, 210016, China
Abstract :
Passivation of InGaAs/InP double heterostructure bipolar transistors (DHBTs) with room temperature SiNx deposition was investigated. Due to reduction of surface damages during SiNx deposition, current gain improvement was observed at low bias voltage region. According to our analysis, a drastic decrease of surface recombination related current component at base-emitter junction occurred after passivation, which is crucial for improving the device reliability.
Keywords :
"Doping","Substrates","Semiconductor device reliability","Passivation","Double heterojunction bipolar transistors"
Conference_Titel :
Communication Problem-Solving (ICCP), 2015 IEEE International Conference on
Print_ISBN :
978-1-4673-6543-7
DOI :
10.1109/ICCPS.2015.7454176
