Title :
Indium phosphide HEMT and HBT production for microwave and millimeter-wave applications
Author :
Streit, Dwight C. ; Sawdai, D. ; Grunbacher, Ron ; Tsai, Roger ; Lai, Richard ; Gutierrez-Aitken, Augusto ; Oki, Aaron
Author_Institution :
Velocium TRW Co., El Segundo, CA, USA
Abstract :
Indium phosphide HEMT and HBT offer significantly improved performance for microwave and millimeter-wave applications compared to gallium arsenide HEMT and HBT. Both low-noise and power amplifiers benefit from the improved transport characteristics and high transconductance of these devices. Velocium and TRW are transitioning production capability from GaAs to InP products using 100 mm substrates to leverage InP´s improved telecommunications performance
Keywords :
III-V semiconductors; MMIC amplifiers; bipolar MMIC; field effect MMIC; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; microwave bipolar transistors; microwave field effect transistors; millimetre wave bipolar transistors; millimetre wave field effect transistors; semiconductor device manufacture; 100 mm; 100 mm substrates; InGaAs-InAlAs-InP; InP; InP HBT; InP HEMT; MMIC technology; high transconductance; low-noise amplifiers; microwave applications; millimeter-wave applications; power amplifiers; production capability; telecommunications performance; transport characteristics; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; High power amplifiers; Indium phosphide; Low-noise amplifiers; Microwave devices; Millimeter wave communication; Production; Transconductance;
Conference_Titel :
Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific
Conference_Location :
Taipei
Print_ISBN :
0-7803-7138-0
DOI :
10.1109/APMC.2001.985576
