Title :
Gain profiles for conditionally stable and unconditionally stable amplifiers
Author :
Meng, C.C. ; Ni, H.Y.
Author_Institution :
Dept. of Electr. Eng., Nat. Chung-Hsing Univ., Taichung, Taiwan
Abstract :
Gain profiles along the line joining the USC (unit Smith chart) center and the SC (stability circle) center for conditionally stable and unconditionally amplifiers are important for amplifier design. SC intersects the USC at two invariant points if |k|<1. K, B and D factors can be used to classify the gain profiles. This paper illustrates the gain profiles along the line joining the USC center and SC center for different K, B and D factors
Keywords :
HEMT integrated circuits; MESFET integrated circuits; MMIC amplifiers; bipolar MMIC; circuit stability; field effect MMIC; HBT technology; MESFET technology; PHEMT technology; SC; USC; amplifier design; conditionally stable amplifiers; gain profiles; invariant points; stability circle; unconditionally stable amplifiers; unit Smith chart; Electronic mail; Frequency; Heterojunction bipolar transistors; MESFETs; Millimeter wave communication; Millimeter wave technology; PHEMTs; Scattering parameters; Stability; Wireless communication;
Conference_Titel :
Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific
Conference_Location :
Taipei
Print_ISBN :
0-7803-7138-0
DOI :
10.1109/APMC.2001.985581
