Title :
Large-signal modeling of microwave gallium nitride-based HFETs
Author :
Drozdovski, N.V. ; Caverly, R.H. ; Quinn, M.J.
Author_Institution :
Dept. of Electron. & Comput. Eng., Villanova Univ., PA, USA
Abstract :
This paper describes the large-signal model of the heterojunction field-effect transistors (HFET) based on AlxGa1-xN/GaN heterostructure used as control components for high-power microwave and RF control devices (switches, attenuators, phase-shifters, etc.). Its use should extend power level of FET-based RF and microwave
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; junction gate field effect transistors; microwave field effect transistors; semiconductor device models; wide band gap semiconductors; AlxGa1-xN/GaN heterostructure; AlGaN-GaN; control component; heterojunction field effect transistor; high-power RF control device; high-power microwave control device; large-signal model; Attenuators; FETs; Gallium nitride; HEMTs; Heterojunctions; III-V semiconductor materials; MODFETs; Microwave devices; Radio frequency; Switches;
Conference_Titel :
Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific
Conference_Location :
Taipei
Print_ISBN :
0-7803-7138-0
DOI :
10.1109/APMC.2001.985633
