Title :
Piezoelectric polarization dependent model of AlGaN/GaN high electron mobility transistors for improved microwave performance
Author :
Rashmi ; Kranti, Abhinav ; Gupta, R.S. ; Haldar, S.
Author_Institution :
Dept. of Electron. Sci., Univ. of Delhi South Campus, New Delhi, India
Abstract :
In the present paper an analytical model has been developed for threshold voltage, Ids-Vds characteristics, transconductance and cut-off frequency of AlGaN/GaN HEMTs incorporating the effects of strongly dominant piezoelectric induced polarization. The effect of source/drain resistances and velocity saturation has also been considered and the results so obtained are in close proximity with experimental data
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; microwave field effect transistors; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN; Ids-Vds characteristics; cut-off frequency; high electron mobility transistors; microwave performance; piezoelectric polarization dependent model; source/drain resistances; threshold voltage; transconductance; velocity saturation; Aluminum gallium nitride; Doping; Electrons; Equations; Gallium nitride; HEMTs; MODFETs; Microwave devices; Piezoelectric polarization; Threshold voltage;
Conference_Titel :
Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific
Conference_Location :
Taipei
Print_ISBN :
0-7803-7138-0
DOI :
10.1109/APMC.2001.985635
