A low noise and low power dissipation downconverter MMIC for DBS applications

Author

Yun, Young ; Fukuda, Takeshi ; Kunihisa, Taketo ; Tanaka, Tsuyoshi ; Ishikawa, Osamu

Author_Institution

Semicond. Device Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan

Volume

1

fYear

2001

fDate

2001

Firstpage

295

Abstract

In this work, using 0.2 μm GaAs modulation doped FET (MODFET) technology, a high performance DBS downconverter MMIC was developed for direct broadcasting satellite (DBS) applications. Without an LNA, the downconverter MMIC showed a very low noise of 4.8 dB, which is 5 dB lower than conventional circuits. A low LO power of -10 dBm was required for normal DBS operation of the downconverter MMIC, which reduced the power consumption to 175 mW via removal of the LO amplifier on the MMIC. The LO leakage power at IF output was suppressed to a level lower than -30 dBm, which removes a bulky LO rejection filter from the board. The fabricated chip, which includes a mixer, IF amplifiers, and LO rejection filter, exhibits a small size of 0.84×0.9 mm²

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC frequency convertors; direct broadcasting by satellite; field effect MMIC; gallium arsenide; integrated circuit layout; integrated circuit noise; low-power electronics; 0.2 micron; 175 mW; 4.8 dB; DBS applications; GaAs; GaAs MODFET downconverter MMIC; IF output; LO amplifier removal; LO leakage power; LO power; direct broadcasting satellite; low LO driving power; low noise; low power consumption; optimal bias voltage; small chip size; Broadcast technology; Epitaxial layers; FETs; Filters; Gallium arsenide; HEMTs; MMICs; MODFET circuits; Power dissipation; Satellite broadcasting;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific

Conference_Location

Taipei

Print_ISBN

0-7803-7138-0

Type

conf

DOI

10.1109/APMC.2001.985645

Filename

985645