Title :
High velocity pseudo-SAWs on CVD diamond substrate
Author :
Chong, N. ; Chan, H.L.W. ; Kwok, K.P. ; Choy, C.L.
Author_Institution :
Dept. of Appl. Phys., Hong Kong Polytech., Kowloon, China
Abstract :
In recent years high frequency SAW devices for GHz range telecommunication applications have been demonstrated using multilayer structures containing a high velocity CVD diamond thin-film on silicon substrate. Despite a theoretical sound velocity of diamond approaching 18000 m/s, the silicon substrate considerably increases the propagation loss and prohibits the high velocity modes to be effectively used, unless the diamond thin-film is thick compared with acoustic wavelengths or a submicron lithography is involved. Instead of growing diamond thin-film on silicon substrate, this work reports a delay-line structure fabricated with ZnO thin-film on a thick CVD diamond substrate (380 μm). A high velocity pseudo-SAWs (HVPSAWs) mode in excess of 15000 m/s with a propagation loss less than 0.58 dB/λ was observed. The device structure allows an investigation of high-velocity and low-coupling propagation modes for SAWs
Keywords :
CVD coatings; S-parameters; UHF devices; acoustic microwave devices; diamond; interdigital transducers; substrates; surface acoustic wave delay lines; surface acoustic waves; zinc compounds; 15000 m/s; 2 GHz; 380 micron; 943 MHz; 963 MHz; Al; Al IDT; C; GHz range telecommunication applications; S-parameter measurements; ZnO thin-film; ZnO-C; delay-line structure; high frequency SAW devices; high velocity pseudo-SAW mode; high-velocity propagation modes; low-coupling propagation modes; thick CVD diamond substrate; Acoustic waves; Frequency; Lithography; Nonhomogeneous media; Propagation losses; Semiconductor thin films; Silicon; Substrates; Surface acoustic wave devices; Thin film devices;
Conference_Titel :
Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific
Conference_Location :
Taipei
Print_ISBN :
0-7803-7138-0
DOI :
10.1109/APMC.2001.985655