• DocumentCode
    3769801
  • Title

    Beyond silicon: Strained-SiGe channel FinFETs

  • Author

    Rajib K. Nanda;Tara Prasanna Dash;Sanghamitra Das;C. K. Maiti

  • Author_Institution
    Department of Electronics and Communication Engineering, Institute of Technical Education and Research (ITER) SOA University, Bhubaneswar 751030 Odisha India
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Coupled three-dimensional (3D) process and device simulations have been applied to study the performance of FinFETs to handle the new FinFET-specific design and process challenges. By using an appropriate 3D technology CAD (TCAD) simulation methodology, it is demonstrated that the novel strained-SiGe channel FinFETs may achieve more than 50% performance enhancement compared to Si-channel FinFETs.
  • Keywords
    "FinFETs","Silicon","Silicon germanium","Stress","Solid modeling","Logic gates"
  • Publisher
    ieee
  • Conference_Titel
    Man and Machine Interfacing (MAMI), 2015 International Conference on
  • Type

    conf

  • DOI
    10.1109/MAMI.2015.7456578
  • Filename
    7456578
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3769801