Title :
Beyond silicon: Strained-SiGe channel FinFETs
Author :
Rajib K. Nanda;Tara Prasanna Dash;Sanghamitra Das;C. K. Maiti
Author_Institution :
Department of Electronics and Communication Engineering, Institute of Technical Education and Research (ITER) SOA University, Bhubaneswar 751030 Odisha India
Abstract :
Coupled three-dimensional (3D) process and device simulations have been applied to study the performance of FinFETs to handle the new FinFET-specific design and process challenges. By using an appropriate 3D technology CAD (TCAD) simulation methodology, it is demonstrated that the novel strained-SiGe channel FinFETs may achieve more than 50% performance enhancement compared to Si-channel FinFETs.
Keywords :
"FinFETs","Silicon","Silicon germanium","Stress","Solid modeling","Logic gates"
Conference_Titel :
Man and Machine Interfacing (MAMI), 2015 International Conference on
DOI :
10.1109/MAMI.2015.7456578
