An electronic synapse based on tantalum oxide material

An electronic synaptic device with weight modulation and learning function is experimentally demonstrated based on a memristor with Ti/Ta2O5/TaOx/Pt structure, which shows good gradual resistance tuning characteristics. The device exhibits various synaptic functions including potentiation, depression, short/long term plasticity (STP/LTP) and Spike-Time-Dependent-Plasticity (STDP) under both DC sweep and pulse operations. The effects of modification pulse conditions such as pulse amplitude, width and interval on synaptic weight tuning was experimentally investigated. Moreover, the learning behavior similar to memory and consolidation in human brains is obtained in our device, indicating it is a promising candidate device for neural network implementation.