DocumentCode :
3770158
Title :
Reliability and cell-to-cell variability of TAS-MRAM arrays under cycling conditions
Author :
Alessandro Grossi;Cristian Zambelli;Piero Olivo;J?r?my Alvarez-H?rault;Ken Mackay
Author_Institution :
Universit? di Ferrara, Dipartimento di Ingegneria, ENDIF, Via G. Saragat 1, 44122 Ferrara, Italy
fYear :
2015
Firstpage :
1
Lastpage :
4
Abstract :
The impact of 500k write cycles on 1kbits TAS-MRAM arrays has been evaluated by extracting a set of characteristic parameters describing the technology in terms of cell-to-cell variability and switching reliability. The relationship between switching voltages and cell resistances has been investigated in order to define the most reliable working conditions.
Keywords :
"Switches","Force","Resistance","Electrical resistance measurement","Magnetic hysteresis","Reliability","Magnetic tunneling"
Publisher :
ieee
Conference_Titel :
Non-Volatile Memory Technology Symposium (NVMTS), 2015 15th
Type :
conf
DOI :
10.1109/NVMTS.2015.7457476
Filename :
7457476
Link To Document :
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