Title :
1S1R device with self-compliance property for high density cross-point memory applications
Author :
Xinyi Li;Huaqiang Wu;Ning Deng;He Qian
Author_Institution :
Institute of Microelectronics, Tsinghua University, Beijing 100084, China
Abstract :
A RRAM cell integrated with a selector was fabricated. The device with 1S1R structure has Pt/Al2O3/NbO2/TaOy/Ta2O5-x/Pt stacks. Al2O3 serves as the current compliance layer. NbO2 layer works as the threshold switching selector. TaOy is the base layer for resistive switching. The RRAM switching is based on the conduction filaments formed and ruptured in the Ta2O5-x layer. For the fabricated device, nonlinearity of LRS state at read voltage and 1/2 read voltage is about 30. The ON/OFF ratio of the device is more than 100.
Keywords :
"Switches","Aluminum oxide","Nonvolatile memory","Performance evaluation","Electrodes","Fabrication","Optimization"
Conference_Titel :
Non-Volatile Memory Technology Symposium (NVMTS), 2015 15th
DOI :
10.1109/NVMTS.2015.7457494
