DocumentCode :
3770486
Title :
High power density thin film resistors
Author :
T. J. Faith
Author_Institution :
RCA Astro-Electronics Division, Princeton, N. J. 08540, USA
fYear :
1975
Firstpage :
75
Lastpage :
79
Abstract :
Untrimmed Ni-Cr resistors on glazed alumina substrates, hermetically sealed in a dry nitrogen atmosphere, survive and remain stable when subjected to power densities greater 2000 W/in2. Large (>7 × 10−4in2) resistors with standard top-hat trimming fail at less than 1000 W/in2 due to hot spots, however, a change in trim line configuration results in stable resistors at greater than 1200 W/in2. Resistance-time characteristics depend on mean resistor temperature, which increases (at a given power density) as the square root of resistor area. Results predict, e.g., that all resistors in a 3/8 × 3/8 × 0.080 inch (0.5W) package can be powered at 2000 W/in2 for several years before a 1 percent resistance change is experienced. The resistor area for such a configuration, 2.5 × 10−4in2, is 50 times less than that required with the present power density design value of 40 W/in2. Resistors deposited on unglazed alumina are even more stable than those deposited on glazed alumina because of their lower operating temperature.
Keywords :
"Resistors","Resistance","Substrates","Density measurement","Power system measurements","Temperature measurement","Dielectrics"
Publisher :
ieee
Conference_Titel :
Electrical/Electronics Insulation Conference, 1975 EIC 12th
Print_ISBN :
978-1-5090-3111-5
Type :
conf
DOI :
10.1109/EIC.1975.7458496
Filename :
7458496
Link To Document :
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