Title :
Demonstration of high efficiency 19.68% MOS-structure silicon solar cell based on 20-nm TiO2 space layer at 4V biasing
Author :
Wen-Jeng Ho;Min-Chun Huang;Yi-Yu Lee;Zhong-Fu Hou;Jian-Jyun Liao
Author_Institution :
Department of Electro-Optical Engineering, National Taipei University of Technology, No. 1, Sec. 3, Zhongxial E. Rd., (10608), Taiwan, R.O.C.
fDate :
7/1/2014 12:00:00 AM
Abstract :
The photovoltaic performance enhanced of a MOS-structure silicon solar cell with transparent-ITO/oxide-film and basing voltage on the ITO electrode is experimentally demonstrated. High transmittance (> 80%) and conductivity (> 4.637×107 μs/cm) of ITO film is obtained using a thermal sputtering deposition. The antireflective characteristics of ITO/TiO2 and ITO/SiO2 are simulated and characterized. Photovoltaic current-voltage, external quantum efficiency, and performance as a function of the biasing voltage are measured. The conversion efficiency increasing from 14.06% to 19.68% is obtained for the proposed MOS cell at 4 V biasing, compared to at 0 V one.
Keywords :
"Photovoltaic cells","Indium tin oxide","Silicon","Films","Leakage currents","Optical variables measurement","Voltage measurement"
Conference_Titel :
Nanoelectronics Conference (INEC), 2014 IEEE International
Electronic_ISBN :
2159-3531
DOI :
10.1109/INEC.2014.7460324
