• DocumentCode
    3770878
  • Title

    Demonstration of high efficiency 19.68% MOS-structure silicon solar cell based on 20-nm TiO2 space layer at 4V biasing

  • Author

    Wen-Jeng Ho;Min-Chun Huang;Yi-Yu Lee;Zhong-Fu Hou;Jian-Jyun Liao

  • Author_Institution
    Department of Electro-Optical Engineering, National Taipei University of Technology, No. 1, Sec. 3, Zhongxial E. Rd., (10608), Taiwan, R.O.C.
  • fYear
    2014
  • fDate
    7/1/2014 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    The photovoltaic performance enhanced of a MOS-structure silicon solar cell with transparent-ITO/oxide-film and basing voltage on the ITO electrode is experimentally demonstrated. High transmittance (> 80%) and conductivity (> 4.637×107 μs/cm) of ITO film is obtained using a thermal sputtering deposition. The antireflective characteristics of ITO/TiO2 and ITO/SiO2 are simulated and characterized. Photovoltaic current-voltage, external quantum efficiency, and performance as a function of the biasing voltage are measured. The conversion efficiency increasing from 14.06% to 19.68% is obtained for the proposed MOS cell at 4 V biasing, compared to at 0 V one.
  • Keywords
    "Photovoltaic cells","Indium tin oxide","Silicon","Films","Leakage currents","Optical variables measurement","Voltage measurement"
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2014 IEEE International
  • Electronic_ISBN
    2159-3531
  • Type

    conf

  • DOI
    10.1109/INEC.2014.7460324
  • Filename
    7460324
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3770878