Title :
Process and device technologies of topological-switching random-access memory (TRAM)
Author :
Norikatsu Takaura
Author_Institution :
Low-power Electronics Association & Project (LEAP), West 7, 16-1 Onogawa, Tsukuba, Ibaraki, Japan
fDate :
7/1/2014 12:00:00 AM
Abstract :
The process and device technologies of “topological-switching RAM” (TRAM) were investigated. The sputtering and dry etching of GeTe/Sb2Te3 superlattice were developed as 300-mm-wafer processes. Fabrication and analyses of one-resistor and one-transistor one-resistor micro test structures revealed the electrical properties that were different from conventional phase change memory (PRAM).
Keywords :
"Phase change random access memory","Switching circuits","X-ray scattering","Etching"
Conference_Titel :
Nanoelectronics Conference (INEC), 2014 IEEE International
Electronic_ISBN :
2159-3531
DOI :
10.1109/INEC.2014.7460331
