• DocumentCode
    3770894
  • Title

    The variability due to random discrete dopant and grain boundary in 3D NAND unit cell

  • Author

    Jungsik Kim;Junyoung Lee; Hyeongwan Oh;Taiuk Rim;Chang-Ki Baek;M. Meyyappan;Jeong-Soo Lee

  • Author_Institution
    Division of IT Convergence Engineering, Pohang University of Science and Technology (POSTECH), 790-784, Korea
  • fYear
    2014
  • fDate
    7/1/2014 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We investigate the electrical variability of polysilicon (poly-Si) channels with the single discrete dopant (SDD) and single grain boundary (SGB) for 3D NAND applications. A 3D simulation is used to investigate the effect of the SGB and the SDD on the threshold voltage (Vth) and subthreshold swing (S/S) variation where the SDD and SGB are randomly located in poly-Si channels. The SGB affects the entire channel potential and causes the Vth and S/S variations. On the other hand, the SDD can cause only small fluctuation in the S/S characteristics.
  • Keywords
    "Three-dimensional displays","Fluctuations","Electric potential","Grain boundaries","Semiconductor process modeling","Solid modeling","Threshold voltage"
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2014 IEEE International
  • Electronic_ISBN
    2159-3531
  • Type

    conf

  • DOI
    10.1109/INEC.2014.7460420
  • Filename
    7460420
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3770894