Review of our density functional study on the structures of conductive filaments and ion migration behaviors in tantalum oxide based resistive switching devices

We have performed density functional calculations toward the microscopic understanding of tantalum oxide based resistive switching devices. In this review, we discuss the structures and electric properties of the conductive filaments in Cu/Ta₂O₅/Pt and Pt/TaO_x/Pt resistive switching devices. We also discuss the migration behaviors of Cu and O ions in these devices.