Title :
Theoretical studies of graphene on SiC
Author :
Hiroyuki Kageshima;Hiroki Hibino;Hiroshi Yamaguchi;Masao Nagase
Author_Institution :
Interdisciplinary Graduate School of Science and Engineering, Shimane University, 1060 Nishi-Kawatsu-cho, Matsue 690-8504, Japan
fDate :
7/1/2014 12:00:00 AM
Abstract :
Graphene on SiC is studied using the first-principles calculation approach. Here, the roles of the [1-100] steps for the growth mechanism are focused on, and are discussed by comparing with the role of the [11-20] step. It has been found that the surface steps play important roles for the graphene growth. These studies provide us fundamental knowledge about the application of graphene on SiC.
Keywords :
"Graphene","Silicon","Adsorption","Rough surfaces","Surface roughness","Face","Silicon carbide"
Conference_Titel :
Nanoelectronics Conference (INEC), 2014 IEEE International
Electronic_ISBN :
2159-3531
DOI :
10.1109/INEC.2014.7460437
