• DocumentCode
    3770918
  • Title

    Short channel InGaSb-on-insulator FET: With and without junctions

  • Author

    Md. Nur Kutubul Alam;Muhammad Shaffatul Islam;Md. Raifqul Islam

  • Author_Institution
    Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, 9203, Bangladesh
  • fYear
    2014
  • fDate
    7/1/2014 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    In this study the ballistic performance of III-V on insulator (XOI) and “junction less XOI” (JLXOI) nFET are investigated and compared by NEGF formalism, taking In0.3Ga0.7Sb as channel material. At 15nm gate length and 0.5nm EOT of gate dielectric the JLXOI shows significant improvement in threshold voltage (Vt) and ION with a fine tuned IOFF. Also the subthreshold slope (SS) reduced from 82.35mV/dec to 68.088mV/dec along with imporoved DIBL performance and simplified fabrication process.
  • Keywords
    "Substrates","Logic gates","Tin","Niobium","Computational modeling","Lead","Semiconductor device modeling"
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2014 IEEE International
  • Electronic_ISBN
    2159-3531
  • Type

    conf

  • DOI
    10.1109/INEC.2014.7460444
  • Filename
    7460444
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3770918