Title :
Effect of thermal annealing on a-plane GaN grown on r-plane sapphire
Author :
Tsung-Shine Ko; Tien-Chang Lu; Jung-Ron Chen; Sin-Liang Ou; Chia-Ming Chang; Hau-Chung Kuo; Der-Yuh Lin
Author_Institution :
Department of Electronic Engineering, National Changhua University of Education, No. 1, Jin-De Rd., 500, Taiwan
fDate :
7/1/2014 12:00:00 AM
Abstract :
The crystal quality improvement of a-plane GaN grown on r-plane sapphire was demonstrated by applying thermal annealing on as-grown samples in nitrogen ambient. The root mean square roughness of the 1000 °C-annealed a-plane GaN was only 0.4 nm measured by atomic force microscopy. Transmission electron microscopy results further indicate threading dislocations were decreased from 5×1010 cm-2 to 1.5×1010 cm-2 along [0001]GaN and stacking faults were decreased from 8.7× 105 cm-1 to 4.8× 105 cm-1 after the sample was annealed at 1000 °C. Room temperature photoluminescence measurements showed band edge emission intensity was enhanced up to 2.6 folds compared to the regular a-plane GaN film. Furthermore, corresponding cathode luminescence images reveal larger emission area for a-plane GaN with annealing than those without annealing, which was attributed to reduction of the nonradiative recombination centers. A series of experiments confirm this annealing process could be useful for further applications of GaN-based optoelectric devices.
Keywords :
"Annealing","Gallium nitride","Crystals","Temperature measurement","Lattices","Surface morphology","Films"
Conference_Titel :
Nanoelectronics Conference (INEC), 2014 IEEE International
Electronic_ISBN :
2159-3531
DOI :
10.1109/INEC.2014.7460461