Title :
GaAs/AlAs tunnelling structure: Temperature dependence of ASPAT detectors
Author :
M. R. R Abdullah;Y. K. Wang;J. Sexton;M. Missous;M. J. Kelly
Author_Institution :
Microelectronics & Nanostructures Group, School of Electrical and Electronic Engineering, University of Manchester, Manchester, United Kingdom
Abstract :
A GaAs/AlAs Asymmetric spacer layer Tunnel diode (ASPAT) with very thin (10ML) layer of AlAs have been successfully grown by solid source molecular beam epitaxy (SSMBE). The Current-voltage (IV) characteristics of these ASPAT diodes were measured for both different emitter geometries and over the temperature range of 77 to 398K. A comparison was made between an in-house fabricated Schottky barrier diode (SBD) and the ASPAT in term of temperature dependencies. A close agreement is achieved for the IV characteristics of the ASPAT diode between simulated and measured data. A calculated value of cut off frequency of 200GHz can be achieved for diodes with an emitter size of 6×6 μm2 used in this study.
Keywords :
"Temperature measurement","Schottky diodes","Tunneling","Semiconductor device measurement","Detectors","Temperature"
Conference_Titel :
Millimeter Waves and THz Technology Workshop (UCMMT), 2015 8th UK, Europe, China
DOI :
10.1109/UCMMT.2015.7460591
