Title :
Current concepts in the passivation and encapsulation of semiconductor devices
Author_Institution :
Research and Development Laboratory, Fairchild Camera and Instrument Corporation, Palo Alto, California 94304, USA
Abstract :
Approaches to providing reliable semiconductor devices in non-hermetic packages has been reviewed and several conclusions are evident. First, the thermal silicon dioxide which is required for stable and controllable device characteristics must be protected by an outer, dense dielectric. Fortunately, both phosphor-silicate glass and silicon nitride are available for this purpose, and these are being used successfully.
Keywords :
"Dielectrics","Silicon","Integrated circuit interconnections","Aluminum","Films","Reliability"
Conference_Titel :
Electrical Insulation Conference, 1971 EIC 10th
Print_ISBN :
978-1-5090-3116-0
DOI :
10.1109/EIC.1971.7460771