DocumentCode
3771016
Title
Current concepts in the passivation and encapsulation of semiconductor devices
Author
Bruce E. Deal
Author_Institution
Research and Development Laboratory, Fairchild Camera and Instrument Corporation, Palo Alto, California 94304, USA
fYear
1971
Firstpage
63
Lastpage
68
Abstract
Approaches to providing reliable semiconductor devices in non-hermetic packages has been reviewed and several conclusions are evident. First, the thermal silicon dioxide which is required for stable and controllable device characteristics must be protected by an outer, dense dielectric. Fortunately, both phosphor-silicate glass and silicon nitride are available for this purpose, and these are being used successfully.
Keywords
"Dielectrics","Silicon","Integrated circuit interconnections","Aluminum","Films","Reliability"
Publisher
ieee
Conference_Titel
Electrical Insulation Conference, 1971 EIC 10th
Print_ISBN
978-1-5090-3116-0
Type
conf
DOI
10.1109/EIC.1971.7460771
Filename
7460771
Link To Document