• DocumentCode
    3771016
  • Title

    Current concepts in the passivation and encapsulation of semiconductor devices

  • Author

    Bruce E. Deal

  • Author_Institution
    Research and Development Laboratory, Fairchild Camera and Instrument Corporation, Palo Alto, California 94304, USA
  • fYear
    1971
  • Firstpage
    63
  • Lastpage
    68
  • Abstract
    Approaches to providing reliable semiconductor devices in non-hermetic packages has been reviewed and several conclusions are evident. First, the thermal silicon dioxide which is required for stable and controllable device characteristics must be protected by an outer, dense dielectric. Fortunately, both phosphor-silicate glass and silicon nitride are available for this purpose, and these are being used successfully.
  • Keywords
    "Dielectrics","Silicon","Integrated circuit interconnections","Aluminum","Films","Reliability"
  • Publisher
    ieee
  • Conference_Titel
    Electrical Insulation Conference, 1971 EIC 10th
  • Print_ISBN
    978-1-5090-3116-0
  • Type

    conf

  • DOI
    10.1109/EIC.1971.7460771
  • Filename
    7460771