• DocumentCode
    3771986
  • Title

    Room Temperature Single Electron Transistor Design Based on Ordered Mesoporous Thin Film

  • Author

    Wang Ruifeng;Wang Zhe

  • Author_Institution
    Inner Mongolia Vocational Coll. of Chem. Eng., Huhhot, China
  • fYear
    2015
  • Firstpage
    708
  • Lastpage
    711
  • Abstract
    Room temperature single electron transistor structure is designed based on the ordered mesoporous thin film. The tunneling structure of three-dimensional six-party coulomb island array is analyzed. The tunneling barried width belonging to tunneling path with the least number of coulomb islands is always equal to skeleton width of ordered mesoporous thin film, which provides accurate structure control for single electron transistor.
  • Keywords
    "Tunneling","Mesoporous materials","Gold","Silicon compounds","Wires","Electron beams"
  • Publisher
    ieee
  • Conference_Titel
    Intelligent Systems Design and Engineering Applications (ISDEA), 2015 Sixth International Conference on
  • Type

    conf

  • DOI
    10.1109/ISDEA.2015.181
  • Filename
    7462717
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3771986