Development of power semiconductor silicon carbide technology - a breakthrough and epoch-making steps

In this paper, the expectation for SiC power devices was described, followed by historical aspects. A breakthrough in epitaxial growth has brought SiC as the most attractive material for power devices. Present device technologies were introduced. Epoch-making steps done by the author´s group were pointed out for SBDs and MOSFETs. The progress of SiC unipolar (majority carrier) devices with blocking voltage below 3.3 kV rating were shown. Some practical applications showing effective use of electric energy were demonstrated. Bipolar (minority carrier) devices, which may take the position above several kV ranges utilizing conductivity modulation, just started for the development.