Crystallization of amorphous silicon on glass substrate by microwave annealing for thin-film-transistor applications

There is a rising demand for low temperature polysilicon TFT these years due to the rapidly increasing market of high resolution display panels. In this paper, both low temperature microwave annealing and laser annealing were used to crystallize amorphous silicon film on glass substrate. It is found that both methods had successfully transferred the amorphous silicon into polysilicon according to Raman spectra results. The microwave crystallized polysilicon had smaller grain size and lower tensile stress than the laser crystallized one. After implantation and activation of BF2 and P, sheet resistance values of the BF2-implanted microwave crystallized samples were similar to that of laser crystallized ones. However, for the P implanted samples, the microwave crystallized samples had two to three magnitude higher sheet resistance compared with the laser crystallized ones.