Title :
Elaboration of Ni/InP contacts: Solid state reactions and associated mechanisms
Author :
E. Ghegin;F. Nemouchi;J. L?b?r;C. Perrin;K. Hoummada;S. Favier;S. Gurb?n;I. Sagnes
Author_Institution :
STMicroelectronics, 850 rue Jean Monnet 38926 Crolles Cedex, France
fDate :
6/1/2015 12:00:00 AM
Abstract :
The metallurgical properties of the Ni/n-InP system have been investigated. We report the formation of a compositionally nonuniform Ni-In-P amorphous layer during the DC sputtering metal deposition process which includes an Ar+ cleaning. During various heat treatments the simultaneous appearance of the Ni2P and Ni3P binary phases and the Ni2InP ternary phase were observed. For temperature equal to or greater than 350°C we highlighted the partition and precipitation of In. Thanks to RTP and longtime annealings we pointed out the predominance of diffusion on the formation of the Ni2P, Ni3P and Ni2InP phases and that of nucleation on the partition and precipitation of In.
Keywords :
"Nickel","Annealing","III-V semiconductor materials","Indium phosphide","Compounds","Substrates","Surface treatment"
Conference_Titel :
Junction Technology (IWJT), 2015 15th International Workshop on
DOI :
10.1109/IWJT.2015.7467096