DocumentCode
3773032
Title
Ultrathin Ni(Pt) silicide formation by laser annealing
Author
Yu-Long Jiang
Author_Institution
School of Microelectronics, Fudan University, Shanghai, 200433, China
fYear
2015
fDate
6/1/2015 12:00:00 AM
Firstpage
61
Lastpage
64
Abstract
The unusual dependence of ultrathin Ni(Pt)Si film formation induced by laser annealing (LA) on thermal budget is demonstrated. It is revealed that a higher thermal budget is required for thinner as-deposited Ni(Pt) film silicidation due to the poorer absorption of laser energy. Besides, compared with conventional RTP, LA can also effectively improve the thermal stability of the ultrathin Ni(Pt)Si film, which can be ascribed to the reduced tensile stress induced by LA during the silicidation process.
Keywords
"Films","Silicides","Thermal stability","Silicon","Nickel alloys","Annealing","Silicidation"
Publisher
ieee
Conference_Titel
Junction Technology (IWJT), 2015 15th International Workshop on
Type
conf
DOI
10.1109/IWJT.2015.7467097
Filename
7467097
Link To Document