• DocumentCode
    3773033
  • Title

    Recent progress of junction technology for germanium CMOS

  • Author

    Tomonori Nishimura;Choong Hyun Lee;Toshimitsu Nakamura;Takeaki Yajima;Kosuke Nagashio;Koji Kita;Akira Toriumi

  • Author_Institution
    The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, 113-8656, Japan
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    65
  • Lastpage
    68
  • Abstract
    To realize scaled Ge CMOS device, there are several challenges of junction formation in nMOSFET. (Fermi level pinning, activation and diffusion of n-type impurities and junction leakage, etc.) In this paper, we report recent progresses of controllability of band alignment at metal/Ge interface, understanding of n-type impurity activation in Ge, and impact of oxygen in Ge on n+/p junction leakage.
  • Keywords
    "Junctions","Annealing","Impurities","Metals","Substrates","Conductivity","MOSFET circuits"
  • Publisher
    ieee
  • Conference_Titel
    Junction Technology (IWJT), 2015 15th International Workshop on
  • Type

    conf

  • DOI
    10.1109/IWJT.2015.7467098
  • Filename
    7467098
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3773033