Schottky barrier height modulation at NiGe/Ge interface by phosphorous ion implantation and its application to Ge-based CMOS devices

Our systematic studies of P-implanted NiGe/Ge junctions revealed the definite threshold in the P concentration for alleviating FLP and negligible P diffusion during drive-in annealing. These findings enable us to design the NiGe/Ge junction characteristics by modifying the device structure and implantation condition. We also demonstrated metal S/D p- and n-MOSFET operations with sub-1-nm EOT using the fabrication process flow of NiGe/Ge.