• DocumentCode
    3773035
  • Title

    Surface protection mechanism of insulating films at junctions in compound semiconductor devices

  • Author

    Tomoki Oku

  • Author_Institution
    Mitsubishi Electric Corporation, High Frequency & Optical Device Works, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    71
  • Lastpage
    76
  • Abstract
    The plasma damage induced by PE-CVD is caused by a decrease in the pulsed current of AlGaN/GaN HEMTs. The low interface trap density achieved by using Cat-CVD helps to improve the performance of AlGaN/GaN HEMTs. The moisture resistance of the stoichiometric Si3N4 films was the highest of the silicon nitride films considered. The pHEMTs covered by Cat-CVD Si3N4 films showed improved humidity resistance compared with other devices.
  • Keywords
    "Films","Logic gates","Resistance","HEMTs","MODFETs","Moisture","Plasmas"
  • Publisher
    ieee
  • Conference_Titel
    Junction Technology (IWJT), 2015 15th International Workshop on
  • Type

    conf

  • DOI
    10.1109/IWJT.2015.7467100
  • Filename
    7467100
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3773035