DocumentCode :
3773478
Title :
Study of Energy Deposition of Energetic Photons in SiC
Author :
Yang Du;Wanting Zhou
Author_Institution :
Res. Inst. of Electron. Sci. &
Volume :
1
fYear :
2015
Firstpage :
305
Lastpage :
307
Abstract :
The mechanism of the interaction between energetic photons and material is analyzed in this paper. And based on the cross-section data base and Monte-Carlo method, the energy deposition and its distribution in SiC caused by 2Mev photon were calculated in this paper. The simulation and detailed sampling method were presented. Obtained results lead to conclude that the energy deposition is linear with SiC thickness within the range of micro-electronics. The analyses of the results indicates the simulation feasible.
Keywords :
"Photonics","Microscopy","Monte Carlo methods","Silicon carbide","Sampling methods","Ionizing radiation","Semiconductor materials"
Publisher :
ieee
Conference_Titel :
Computational Intelligence and Design (ISCID), 2015 8th International Symposium on
Print_ISBN :
978-1-4673-9586-1
Type :
conf
DOI :
10.1109/ISCID.2015.261
Filename :
7468956
Link To Document :
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