Title :
Noise characterization of Silicon-Germanium HBTs
Author :
Rajib K. Nanda;Tara Prasanna Dash;Sanghamitra Das;C. K. Maiti
Author_Institution :
Department of Electronics and Communication Engineering, Institute of Technical Education and Research (ITER) SOA University, Bhubaneswar 751030 Odisha India
Abstract :
Coupled process and device simulations have been applied to study the microwave noise performance of high frequency Silicon-Germanium heterojunction bipolar transistors. The detrimental effects of noise in advanced strain-engineered bipolar devices with highly scaled device dimensions are discussed in detail. Y-parameter based technique has been used to extract the noise parameters of bipolar transistors to account for the correlation between the base and collector shot noise.
Keywords :
"Silicon germanium","Semiconductor process modeling","Silicon","Heterojunction bipolar transistors","Microwave integrated circuits","Performance evaluation","Correlation"
Conference_Titel :
Microwave, Optical and Communication Engineering (ICMOCE), 2015 International Conference on
DOI :
10.1109/ICMOCE.2015.7489747
