DocumentCode
3777633
Title
Small signal model of Cylindrical Surrounding Double-Gate MOSFET and its parameters
Author
Viranjay M. Srivastava
Author_Institution
Department of Electronic Engineering, Howard Collage, University of KwaZulu-Natal, Durban - 4041, South Africa
Volume
1
fYear
2015
Firstpage
1
Lastpage
5
Abstract
The semiconductor devices are scaled into nanotechnology range and facing the short channel effects and subthreshold characteristics, which restrict the application of traditional planar devices. To solve these problems, a novel device geometries as double-gate MOSFET has been designed. In this work the double-gate model has been extended to design a Cylindrical Surrounding Double-Gate MOSFET and a small signal model of this MOSFET has been analyzed. With the help of this model the bias and geometry dependence of the various parametric components has been discussed.
Keywords
"MOSFET","Semiconductor device modeling","Capacitance","Logic gates","Integrated circuit modeling","Analytical models","Resistance"
Publisher
ieee
Conference_Titel
Trends in Automation, Communications and Computing Technology (I-TACT-15), 2015 International Conference on
Type
conf
DOI
10.1109/ITACT.2015.7492672
Filename
7492672
Link To Document