• DocumentCode
    3777769
  • Title

    Measurement-based MOSFET model for helium temperatures

  • Author

    Vadim N. Biryukov;Alexandr M. Pilipenko

  • Author_Institution
    Southern Federal University, Russia
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A new MOSFET model for liquid-helium temperatures is introduced by the replacement of certain parameters of the original physical compact model by the Pad? functions of a gate voltage. The relative root-mean-square error of I-V curves modeling is reduced at least threefold with the error of the output conductance and transconductance modeling reduced twofold.
  • Keywords
    "Semiconductor device modeling","MOSFET","Integrated circuit modeling","Threshold voltage","Logic gates","Numerical models","Temperature measurement"
  • Publisher
    ieee
  • Conference_Titel
    East-West Design & Test Symposium (EWDTS), 2015 IEEE
  • Type

    conf

  • DOI
    10.1109/EWDTS.2015.7493109
  • Filename
    7493109
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3777769