Accurate reference current generation method and circuit in CMOS

Reference current generation method and circuit is presented. Generated current has low variability over process and corner. Process dependency is reduced by employing parallel connected MOS devices operating in triode and temperature insensitivity is obtained by subtracting currents with different temperature dependency profiles. A circuit based on presented method has been designed. Simulated results showed ±12.2% current variation over technology process corners for temperature range of -40°C to 125°C. The operation of the circuit is verified for output currents of 10s of uA.