DocumentCode :
3778234
Title :
Research on temperature compensation method of silicon resonant accelerometer based on integrated temperature measurement resonator
Author :
Zhang Jing; Qiu Anping; Shi Qin; Bian You; Xia Guoming
Author_Institution :
MEMS Inertial Technology Research Center, Nanjing University of Sci. &
Volume :
3
fYear :
2015
fDate :
7/1/2015 12:00:00 AM
Firstpage :
1577
Lastpage :
1581
Abstract :
In order to improve the bias stabilities in different temperature for silicon resonant accelerometer (SRA), a temperature measurement method, which measure Temperature in package cavity, was proposed based on chip integrated temperature resonator. Firstly, the frequency-temperature characteristics of the resonators in SRA is analyzed. Afterwards, the heat transfer model for SRA based on chip integrated temperature resonator is established, and the temperature measurement error is analyzed. Then, the hysteresis errors of the two temperature measurement methods based on the external temperature sensor and integrated temperature resonator are contrasted. At last, the first-order linear temperature compensation model is established after several tests of accelerometer bias and the temperature related bias is compensated. Experiment results indicate that using integrated temperature measurement resonator, hysteresis error decreases from 200 Hz to 10 Hz and the bias instability from 283.3 ug to 28 ug after temperature compensation. The results exposed that integrated temperature measurement resonator can accurately reflect the cavity temperature of SRA and increase accuracy of temperature compensation.
Keywords :
"Temperature measurement","Electrical resistance measurement","Semiconductor device measurement","Resistance","Temperature sensors","Frequency measurement","Measurement uncertainty"
Publisher :
ieee
Conference_Titel :
Electronic Measurement & Instruments (ICEMI), 2015 12th IEEE International Conference on
Type :
conf
DOI :
10.1109/ICEMI.2015.7494478
Filename :
7494478
Link To Document :
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